CSD85312Q3E
制造商:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: 采用 3mm x 3mm SON 封装的双通道共源极、14mΩ、20V、N 沟道 NexFET™ 功率 MOSFET
物料参数
| VDS (V): | 20 |
| VGS (V): | 10 |
| Type: | N-channel |
| Configuration: | Dual Common Source |
| Rds(on) at VGS=4.5 V (max) (mΩ): | 14 |
| VGSTH typ (typ) (V): | 1.1 |
| QG (typ) (nC): | 11.7 |
| QGD (typ) (nC): | 1.6 |
| QGS (typ) (nC): | 3.5 |
| ID - silicon limited at TC=25°C (A): | 39 |
| ID - package limited (A): | 39 |
| Logic level: | Yes |
| Rating: | Catalog |
| Operating temperature range (°C): | -55 to 150 |
| VDS (V): | 20 |
| VGS (V): | 10 |
| Type: | N-channel |
| Configuration: | Dual Common Source |
| Rds(on) at VGS=4.5 V (max) (mΩ): | 14 |
| VGSTH typ (typ) (V): | 1.1 |
| QG (typ) (nC): | 11.7 |
| QGD (typ) (nC): | 1.6 |
| QGS (typ) (nC): | 3.5 |
| ID - silicon limited at TC=25°C (A): | 39 |
| ID - package limited (A): | 39 |
| Logic level: | Yes |
| Rating: | Catalog |
| Operating temperature range (°C): | -55 to 150 |
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